Interface engineering of molecular charge storage dielectric layers fo organic thin-film memory transistors

Artoem Khassanov, Thomas Schmaltz, Hans-Georg Steinrück, Andreas Magerl, Andreas Hirsch, and Marcus Halik.

Abstract

Mixed self-assembled monolayers of C₆₀-functionalized and different long-chained insulating phosphonic acids provide molecular scale non-volatile memory dielectrics for low-voltage organic thin-film transistors. The memory retention depends on the insulation of the C₆₀ moiety and can be improved by embedding into the insulating SAM matrix and covering by corresponding insulating molecules

https://onlinelibrary.wiley.com/doi/abs/10.1002/admi.201400238